Everything has already been tested in the past.
Nowadays we can make smaller devices, we must investigate new solutions at 0.00013 millimeters (130nm).
Electronic rectifiers and PNP transistors can be made out of Cuprous Oxide (Cu2O).
The substrate is a silicon wafer with 50nm silicon dioxide.
Copper (copper (II) acetate hydrate + ethanolamine) layer was deposited by spin-coating technic on the wafer and then annealed at 500°C for 1 hour to obtain cupric oxide.
50nm thick drain and source electrodes have been deposited by vacuum thermal evaporation of gold or aluminium.
The FET has a channel width of 2.5mm and a length of 100nm.